New innovation enhances information storage in electronic, ushers in new era of computing

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New innovation enhances information storage in electronic, ushers in new era of computing
30 December 2013, 3:13 pm

A team of researchers has developed a new Magnetoresistive Random Access Memory (MRAM) technology that will boost information storage in electronic systems. The innovative technology will drastically increase storage space and enhance memory which will ensure that fresh data stays intact, even in the case of a power failure. The team has already filed a US provisional patent for their technology.

Source: Robotics Research News -- ScienceDaily


 


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